S&M2951 Research Paper of Special Issue
Published in advance: March 22, 2022
Published: June 8, 2022
Optical and Electrical Properties of Mo-doped Zr:ZnO Multilayer Thin Films for Photosensor Applications [PDF]
Ming-Yu Yen, Tao-Hsing Chen, Po-Hsun Lai, Sheng-Lung Tu, and Yun-Hwei Shen
(Received October 26, 2021; Accepted December 13, 2021)
Keywords: Zr:ZnO, molybdenum, multilayer films, radio-frequency magnetron sputtering, vacuum annealing
We investigated the structural, optical, and electrical properties of molybdenum and zirconium-doped zinc oxide (ZZO) with a purity of 99.99% deposited on a glass substrate by radio-frequency magnetron sputtering and annealed at different temperatures. The doping amount of zirconium on ZnO was 3 wt%. The optimal resistivity of the multilayers, 5.1 × 10−3 Ω-cm, was observed for an annealing temperature of 400 °C. This film also had the highest transmittance of 93%. Moreover, the optimal figure of merit, 4.6 × 10−6 Ω−1, was observed for an annealing temperature of 400 °C. Furthermore, the grain size also increased with the annealing temperature, as observed by scanning electron microscopy. Mo/ZZO multilayer thin films with such excellent optical and electrical properties can be applied in photosensors.Corresponding author: Tao-Hsing Chen
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Cite this article
Ming-Yu Yen, Tao-Hsing Chen, Po-Hsun Lai, Sheng-Lung Tu, and Yun-Hwei Shen, Optical and Electrical Properties of Mo-doped Zr:ZnO Multilayer Thin Films for Photosensor Applications, Sens. Mater., Vol. 34, No. 6, 2022, p. 2015-2023.