Young Researcher Paper Award 2023
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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 35, Number 5(1) (2023)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 1509-1517
S&M3264 Research Paper of Special Issue https://doi.org/10.18494/SAM4001 Published: May 12, 2023 Modulation of Gate Work Function of Devices for Protection Against Electrostatic Discharge [PDF] Yan Wu, Ruizhen Wu, Yintang Yang, Yi Liu, Yaping Yue, and Lin Wang (Received June 28, 2022; Accepted December 7, 2022) Keywords: electrostatic discharge (ESD), leakage current, silicon controlled rectifier (SCR), trigger voltage, work function
Electrostatic discharge (ESD) events are causing an increasing amount of damage in advanced integrated circuits (ICs). Among the onchip ESD protection devices, the silicon controlled rectifier (SCR) is the most robust. We have proposed a new SCR with an embedded n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). By properly adjusting the gate work function of the nMOSFET, the SCR obtains a low trigger voltage of 1.5 V and a low leakage current of 7.6 × 10−10 A. The overshoot voltage under a fast ESD event is also reduced owing to the strong conduction of the nMOSFET. By numerical simulation, we evaluate the impact of the temperature, noise, and stress waveform on the ESD performance. The results are discussed and detailed physical insights are given.
Corresponding author: Ruizhen Wu  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Yan Wu, Ruizhen Wu, Yintang Yang, Yi Liu, Yaping Yue, and Lin Wang, Modulation of Gate Work Function of Devices for Protection Against Electrostatic Discharge, Sens. Mater., Vol. 35, No. 5, 2023, p. 1509-1517. |
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