pp. 269-276
S&M3517 Research Paper of Special Issue https://doi.org/10.18494/SAM4703 Published: January 26, 2024 Characterization of Plasma-etched Surfaces of TlBr Crystals for Radiation Detectors [PDF] Taro Nojima, Mitsuhiro Nogami, Toshiyuki Onodera, and Keitaro Hitomi (Received October 18, 2023; Accepted January 5, 2024) Keywords: TlBr semiconductor detector, plasma etching, X-ray photoelectron spectroscopy (XPS)
The changes in thallium bromide (TlBr) surfaces induced by plasma etching were characterized by X-ray photoelectron spectroscopy (XPS). A TlBr crystal was grown by the traveling molten zone method with zone-purified material. TlBr wafers were obtained from the crystal. Ar plasma etching was performed on the TlBr wafers. XPS revealed that Tl metal (Tl0) was created in TlBr by the plasma etching. The Tl0 concentration increased with the irradiation time of the plasma. The net Tl0 concentrations of TlBr wafers etched by the plasma for 45 and 180 s were 0.7 and 2.6 wt%, respectively.
Corresponding author: Taro NojimaThis work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Taro Nojima, Mitsuhiro Nogami, Toshiyuki Onodera, and Keitaro Hitomi, Characterization of Plasma-etched Surfaces of TlBr Crystals for Radiation Detectors, Sens. Mater., Vol. 36, No. 1, 2024, p. 269-276. |