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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials, Volume 36, Number 1(2) (2024)
Copyright(C) MYU K.K.
pp. 269-276
S&M3517 Research Paper of Special Issue
https://doi.org/10.18494/SAM4703
Published: January 26, 2024

Characterization of Plasma-etched Surfaces of TlBr Crystals for Radiation Detectors [PDF]

Taro Nojima, Mitsuhiro Nogami, Toshiyuki Onodera, and Keitaro Hitomi

(Received October 18, 2023; Accepted January 5, 2024)

Keywords: TlBr semiconductor detector, plasma etching, X-ray photoelectron spectroscopy (XPS)

The changes in thallium bromide (TlBr) surfaces induced by plasma etching were characterized by X-ray photoelectron spectroscopy (XPS). A TlBr crystal was grown by the traveling molten zone method with zone-purified material. TlBr wafers were obtained from the crystal. Ar plasma etching was performed on the TlBr wafers. XPS revealed that Tl metal (Tl0) was created in TlBr by the plasma etching. The Tl0 concentration increased with the irradiation time of the plasma. The net Tl0 concentrations of TlBr wafers etched by the plasma for 45 and 180 s were 0.7 and 2.6 wt%, respectively.

Corresponding author: Taro Nojima


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Cite this article
Taro Nojima, Mitsuhiro Nogami, Toshiyuki Onodera, and Keitaro Hitomi, Characterization of Plasma-etched Surfaces of TlBr Crystals for Radiation Detectors, Sens. Mater., Vol. 36, No. 1, 2024, p. 269-276.



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