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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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MYU K.K.
Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 36, Number 5(1) (2024)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 1849-1858
S&M3639 Research Paper of Special Issue https://doi.org/10.18494/SAM4803 Published: May 15, 2024 Time-resolved Response Improvement of Oxygen-doped a-In–Ga–Sn–O Metal–Semiconductor–Metal Photodetectors by Sputtering [PDF] Artde Donald Kin-Tak Lam, Tsung-I Liao, Sheng-Po Chang, and Shoou-Jinn Chang (Received October 30, 2023; Accepted April 15, 2024) Keywords: transparent oxide semiconductors, indium gallium tin oxide, UV photodetectors, reactive sputtering, oxygen doping
In this work, we fabricated indium gallium zinc oxide (IGZO) metal–semiconductor–metal (MSM) photodetectors (PDs) with different oxygen flow ratios and investigated and discussed their characteristics. 0% PDs show a high responsivity of 25.75 A/W, but their dark current is very high and their switching time is low. 10% PDs exhibit the highest performance. They show a high photo/dark current ratio of 1.05 × 105 with a low dark current of 1.19 × 10−11 A. Their responsivity is 0.12 A/W and their rejection ratio is 9.38 × 105, which is sufficiently high to ensure the accuracy of distinguishing between UV and visible ranges. Their rising time is 206 s and their falling time is 58 s. It was observed that the response time shortened as the oxygen flow ratio was increased.
Corresponding author: Sheng-Po Chang  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Artde Donald Kin-Tak Lam, Tsung-I Liao, Sheng-Po Chang, and Shoou-Jinn Chang, Time-resolved Response Improvement of Oxygen-doped a-In–Ga–Sn–O Metal–Semiconductor–Metal Photodetectors by Sputtering, Sens. Mater., Vol. 36, No. 5, 2024, p. 1849-1858. |
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