pp. 3651-3660
S&M4143 Research paper of Special Issue https://doi.org/10.18494/SAM5732 Published: August 21, 2025 UV-C Light Detection in Aluminum Gallium Oxide Metal–Semiconductor–Metal Photodetectors [PDF] Tsung-I Liao, Sheng-Po Chang, and Shoou-Jinn Chang (Received May 9, 2025; Accepted August 4, 2025) Keywords: transparent oxide semiconductors (TOSs), aluminum gallium oxide (AGO), UV photodetectors, co-sputtering
In this work, we fabricated aluminum gallium oxide (AGO) metal–semiconductor–metal photodetectors (PDs) with different RF powers of Ga₂O₃ target (PGa), and their characteristics were investigated and discussed. At PGa below 160 W, the PDs exhibited high resistance across the whole range of wavelengths. When PGa increases to 160 W or higher, both the response and rejection ratio improve significantly. The optimal photoresponse occurs when the DC power of Al is 80 W and PGa is 180 W, with the rejection ratio about 105, the responsivity 0.2 mA/W, the rise time less than 1 s, and the decay time less than 0.1 s. Additionally, the optimal AGO PDs have high stability and repeatability demonstrated in the time-resolved response.
Corresponding author: Sheng-Po Chang![]() ![]() This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Tsung-I Liao, Sheng-Po Chang, and Shoou-Jinn Chang, UV-C Light Detection in Aluminum Gallium Oxide Metal–Semiconductor–Metal Photodetectors , Sens. Mater., Vol. 37, No. 8, 2025, p. 3651-3660. |