pp. 4403-4412
S&M4189 Research Paper https://doi.org/10.18494/SAM5890 Published: October 21, 2025 Effects of Annealing Temperature and Sputtering Power on the Optical and Electrical Properties of Transparent Conductive Zinc Oxide Films Doped with Titanium [PDF] Wen-Nan Wang, Yun-Hsin Cheng, Hsin-Yun Chiu, An-Tai Chiu, and Tao-Hsing Chen (Received August 25, 2025; Accepted September 29, 2025) Keywords: ZnO:Ti, electrical property, sputtering, optical property, annealing
In this study, we investigated the optical and electrical properties of transparent conductive zinc oxide (ZnO) thin films doped with titanium (Ti) deposited through radio frequency (RF) sputtering at different annealing temperatures and sputtering power levels. The ZnO:Ti thin films exhibited the lowest resistivity of 1.60 × 10−3 Ω-cm, a high transmittance of 89%, and the optimal figure of merit (FOM) of 9.31 × 10−8 Ω−1 when sputtered at 100 W for 30 min and annealed at 500 ℃. Scanning electron microscopy of the films’ surface morphology revealed that higher annealing temperatures promoted grain growth.
Corresponding author: Tao-Hsing Chen![]() ![]() This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Wen-Nan Wang, Yun-Hsin Cheng, Hsin-Yun Chiu, An-Tai Chiu, and Tao-Hsing Chen, Effects of Annealing Temperature and Sputtering Power on the Optical and Electrical Properties of Transparent Conductive Zinc Oxide Films Doped with Titanium, Sens. Mater., Vol. 37, No. 10, 2025, p. 4403-4412. |