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pp. 629-634
S&M4331 Research paper https://doi.org/10.18494/SAM6008 Published: February 6, 2026 Radiation-induced Luminescence of Eu-doped Ga2O3–SiO2 Glasses [PDF] Akihiro Nishikawa, Daiki Shiratori, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi, and Takayuki Yanagida (Received October 21, 2025; Accepted December 9, 2025) Keywords: glasses, scintillator, Eu
In this study, Eu-doped (0.1, 0.3, 1.0, and 3.0%) Ga2O3–SiO2 glasses were synthesized by the melt-quenching method using a floating zone furnace. The 0.1–1.0% Eu samples were partially crystallized glasses, which included the cristobalite phase, whereas the 3.0% Eu sample indicated only a halo pattern. All the samples showed the emission originating from divalent Eu ions at around 450 nm in photoluminescence and scintillation. Therefore, it was found that self-reduction occurred in all the samples. The full-energy peak under irradiation with α-rays of 241Am was observed in all the samples, and the 1.0% Eu sample showed the highest light yield of 100 photons/5.5 MeV.
Corresponding author: Akihiro Nishikawa![]() ![]() This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Akihiro Nishikawa, Daiki Shiratori, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi, and Takayuki Yanagida, Radiation-induced Luminescence of Eu-doped Ga2O3–SiO2 Glasses, Sens. Mater., Vol. 38, No. 2, 2026, p. 629-634. |