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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials, Volume 38, Number 2(1) (2026)
Copyright(C) MYU K.K.
pp. 629-634
S&M4331 Research paper
https://doi.org/10.18494/SAM6008
Published: February 6, 2026

Radiation-induced Luminescence of Eu-doped Ga2O3–SiO2 Glasses [PDF]

Akihiro Nishikawa, Daiki Shiratori, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi, and Takayuki Yanagida

(Received October 21, 2025; Accepted December 9, 2025)

Keywords: glasses, scintillator, Eu

In this study, Eu-doped (0.1, 0.3, 1.0, and 3.0%) Ga2O3–SiO2 glasses were synthesized by the melt-quenching method using a floating zone furnace. The 0.1–1.0% Eu samples were partially crystallized glasses, which included the cristobalite phase, whereas the 3.0% Eu sample indicated only a halo pattern. All the samples showed the emission originating from divalent Eu ions at around 450 nm in photoluminescence and scintillation. Therefore, it was found that self-reduction occurred in all the samples. The full-energy peak under irradiation with α-rays of 241Am was observed in all the samples, and the 1.0% Eu sample showed the highest light yield of 100 photons/5.5 MeV.

Corresponding author: Akihiro Nishikawa


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Cite this article
Akihiro Nishikawa, Daiki Shiratori, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi, and Takayuki Yanagida, Radiation-induced Luminescence of Eu-doped Ga2O3–SiO2 Glasses, Sens. Mater., Vol. 38, No. 2, 2026, p. 629-634.



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