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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials, Volume 38, Number 2(1) (2026)
Copyright(C) MYU K.K.
pp. 685-690
S&M4338 Research paper
https://doi.org/10.18494/SAM6098
Published: February 6, 2026

Synthesis of Low-temperature-phase X1-Y2SiO5 Film Doped with Ce3+ and Its Luminescence Properties [PDF]

Airi Shikichi and Akihiko Ito

(Received October 31, 2025; Accepted December 22, 2025)

Keywords: X1-Y2SiO5, chemical vapor deposition, thick film phosphor, scintillation properties

We synthesized low-temperature-phase X1-Y2SiO5 doped with Ce3+ (Ce3+:X1-YSO) on a quartz glass substrate by laser-assisted chemical vapor deposition at a rate of 72 μm h−1. Single-phase Ce3+:X1-YSO films were obtained at an Y2O3 molar ratio of 36 mol% in precursor vapor at a deposition temperature of 978–1079 K. Under UV irradiation, the Ce3+:X1-YSO film emitted a blue light originating from the 5d–4f transition of Ce3+ ions. Under 5.5 MeV α-ray excitation from an 241Am source, the scintillation decay constant of the Ce3+:X1-YSO film was 22.9 ± 0.63 ns.

Corresponding author: Akihiko Ito


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Cite this article
Airi Shikichi and Akihiko Ito, Synthesis of Low-temperature-phase X1-Y2SiO5 Film Doped with Ce3+ and Its Luminescence Properties, Sens. Mater., Vol. 38, No. 2, 2026, p. 685-690.



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