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pp. 685-690
S&M4338 Research paper https://doi.org/10.18494/SAM6098 Published: February 6, 2026 Synthesis of Low-temperature-phase X1-Y2SiO5 Film Doped with Ce3+ and Its Luminescence Properties [PDF] Airi Shikichi and Akihiko Ito (Received October 31, 2025; Accepted December 22, 2025) Keywords: X1-Y2SiO5, chemical vapor deposition, thick film phosphor, scintillation properties
We synthesized low-temperature-phase X1-Y2SiO5 doped with Ce3+ (Ce3+:X1-YSO) on a quartz glass substrate by laser-assisted chemical vapor deposition at a rate of 72 μm h−1. Single-phase Ce3+:X1-YSO films were obtained at an Y2O3 molar ratio of 36 mol% in precursor vapor at a deposition temperature of 978–1079 K. Under UV irradiation, the Ce3+:X1-YSO film emitted a blue light originating from the 5d–4f transition of Ce3+ ions. Under 5.5 MeV α-ray excitation from an 241Am source, the scintillation decay constant of the Ce3+:X1-YSO film was 22.9 ± 0.63 ns.
Corresponding author: Akihiko Ito![]() ![]() This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Airi Shikichi and Akihiko Ito, Synthesis of Low-temperature-phase X1-Y2SiO5 Film Doped with Ce3+ and Its Luminescence Properties, Sens. Mater., Vol. 38, No. 2, 2026, p. 685-690. |