SrBi4Ti4O15 (SBT) ferroelectric thin films were fabricated by a sol–gel spin-coating method and evaluated for resistive switching behavior in metal–insulator–metal (MIM) resistive random access memory (RRAM) devices. An SBT precursor solution was deposited on TiN/Si substrates, followed by rapid thermal annealing (RTA) and supercritical fluid (SCF) post-treatments to improve crystallinity, defect passivation, and interfacial quality. The SCF process was performed at 120 ℃ and 3000 psi using supercritical CO2 with 0.1 vol.% H2O. Aluminum top electrodes were deposited to form Al/SBT/TiN/Si structures. X-ray diffraction confirmed the formation of the Aurivillius-type layered perovskite SBT phase with characteristic (119), (200), and (002) orientations. Moderate annealing temperatures yielded uniform grain distribution and reduced defect density, as observed by field-emission scanning electron microscopy. Electrical measurements demonstrated stable bipolar resistive switching with a forming voltage of approximately 6 V and low operating voltages during set/reset processes. The devices exhibited reliable endurance and retention characteristics. Current–voltage fitting revealed ohmic conduction in the low-resistance state owing to conductive filament formation, while Schottky emission and Poole–Frenkel transport dominated the high-resistance state. SCF-treated devices showed reduced leakage current and improved switching uniformity, indicating enhanced dielectric quality. These results demonstrate the feasibility of SBT thin films for low-power nonvolatile memory applications.