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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 25, Number 3 (2013)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 177-187
S&M912 Research Paper of Special Issue https://doi.org/10.18494/SAM.2013.852 Published: March 28, 2013 Assessment of Stacking Faults in Silicon Carbide Crystals [PDF] Hidekazu Yamamoto (Received September 24, 2012; Accepted November 5, 2012) Keywords: silicon carbide (SiC), staking fault, X-ray topography, photoluminescence (PL), mirror electron microscopy (MEM), atomic force microscopy (AFM)
X-ray topography, photoluminescence (PL) spectroscopy, mirror electron microscopy (MEM), and atomic force microscopy (AFM) were employed to evaluate stacking faults in silicon carbide (SiC) crystals. The results reveal that transmission X-ray topography can be used to assess internal stacking faults in crystals, while PL spectroscopy and MEM can be used to assess stacking faults near the surface. The stacking faults assessed by these different methods were found to be the same. AFM revealed that sites where stacking faults were exposed on the surface had microscopic level differences of about 0.1 nm, which are thought to be generated by different etch rates during mirror polishing.
Corresponding author: Hidekazu Yamamoto Cite this article Hidekazu Yamamoto, Assessment of Stacking Faults in Silicon Carbide Crystals, Sens. Mater., Vol. 25, No. 3, 2013, p. 177-187. |
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