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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 26, Number 4 (2014)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 235-244
S&M987 Research Paper of Special Issue https://doi.org/10.18494/SAM.2014.967 Published: May 27, 2014 Analysis of Temperature Dependence of Dark Current Mechanisms in Mid-Wavelength Infrared pin Type-II Superlattice Photodiodes [PDF] Jarosław Wróbel, Elena Plis, Waldemar Gawron, Marcin Motyka, Piotr Martyniuk, Paweł Madejczyk, Andrzej Kowalewski, Mateusz Dyksik, Jan Misiewicz, Sanjay Krishna and Antoni Rogalski (Received November 21, 2013; Accepted February 24, 2014) Keywords: dark current, type II, superlattice, photodiode, differential resistance, infrared detection, high operating temperature, reduced mass, pin structure
We report on the temperature dependence characteristics of mid-wavelength InAs/GaSb type-II superlattice photodiodes in a temperature range from 120 to 240 K. The bulk material model with an effective bandgap of superlattice material has been used in the modelling of the experimental data. Temperature and bias-dependent differential resistances have been analyzed in detail owing to the contributing mechanisms that limit the electrical performance of the diodes. The C1-HH1 reduced mass has been estimated from the fitting to the high reverse bias (< –1.0 V) voltage and given as about 0.015 m0 in nearly the entire considered temperature range. This value agrees well with much more complex simulations and cyclotron resonance measurements. Obtaining very good results was possible, thanks to the inclusion of series resistance into the calculations. In this paper, we show how to overcome difficulties with the nonlinear problem related to it.
Corresponding author: Jarosław Wróbel Cite this article Jarosław Wróbel, Elena Plis, Waldemar Gawron, Marcin Motyka, Piotr Martyniuk, Paweł Madejczyk, Andrzej Kowalewski, Mateusz Dyksik, Jan Misiewicz, Sanjay Krishna and Antoni Rogalski, Analysis of Temperature Dependence of Dark Current Mechanisms in Mid-Wavelength Infrared pin Type-II Superlattice Photodiodes, Sens. Mater., Vol. 26, No. 4, 2014, p. 235-244. |
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