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Sensors and Materials, Volume 15, Number 2 (2003)
Copyright(C) MYU K.K.
pp. 93-99
S&M512 Research Paper of Special Issue
Published: 2003

Difference in Activated Atomic Steps on (111) Silicon Surface during KOH and TMAH Etching [PDF]

Kazuo Sato, Takehiro Masuda and Mitsuhiro Shikida

(Received October 11, 2002; Accepted April 2, 2003)

Keywords: anisotripic etching, silicon, KOH, TMAH, atomic step

Anisotropic etching of (111) silicon surface using potassium hydroxide (KOH) and tetra-methyl ammonium hydroxide (TMAH) solutions was experimentally investigated. Etching advanced as a result of lateral movement of steps of 20–50 nm in height. Steps on the (111) surface are classified into two groups, those that are perpendicular to [112] and, those that are perpendicular to [1 12]. Steps having a three-backbonded edge were more stable than those having a two-backbonded edge in case of KOH etching. On the contrary, in case of TMAH, steps having a three-backbonded edge were more active than steps having a two-backbonded edge. This fact explains the difference in macroscopic anisotropy in KOH and TMAH etching in the vicinity of (111).

Corresponding author: Kazuo Sato


Cite this article
Kazuo Sato, Takehiro Masuda and Mitsuhiro Shikida, Difference in Activated Atomic Steps on (111) Silicon Surface during KOH and TMAH Etching, Sens. Mater., Vol. 15, No. 2, 2003, p. 93-99.

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