pp. 191-198
S&M557 Research Paper of Special Issue Published: 2004 Bolometer-Type Infrared Sensors Fabricated by Plasmaless Dry Etching [PDF] Yoji Saito and Hiroki Murotani (Received March 9, 2004; Accepted June 29, 2004) Keywords: chlorine trifluoride, polycrystalline silicon film, bolometer, FTIR
Bolometer-type infrared (IR) sensors were fabricated using undoped polycrystalline silicon (poly-Si) films, the temperature coefficient of resistance of which was 7 %/K. The device size was 50 × 50 µm2. A bridge structure with an air gap about 50 µm deep was formed to reduce thermal conduction to the substrate from the sensing region, by plasmaless dry etching with chlorine trifluoride gas. The voltage responsivity of the fabricated sensor was 1.3 × 104 V/W at a bias voltage of 1.5 V.
Corresponding author: Yoji SaitoCite this article Yoji Saito and Hiroki Murotani, Bolometer-Type Infrared Sensors Fabricated by Plasmaless Dry Etching, Sens. Mater., Vol. 16, No. 4, 2004, p. 191-198. |