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Sensors and Materials, Volume 17, Number 5 (2005)
Copyright(C) MYU K.K.

pp. 269-276
S&M605 Research Paper of Special Issue
Published: 2005

Fabrication of a High Temperature Silicon Pressure Sensor Using SDB-SOI Technology [PDF]

Young-Tae Lee, Hidekuni Takao and Makoto Ishida

(Received August 23, 2004; Accepted December 13, 2004)

Keywords: Pressure sensor, Piezoresistive, SOI, High temperature

A high-temperature pressure sensor using SOI structures formed by silicon-direct- bonding (SDB) technology has been developed. This sensor consists of a thin square diaphragm and a single-element four-terminal piezoresistor produced by MEMS technol- ogy by a standard IC process. The diaphragm sizes are 70070040 m3 (D700), 1700170040 m3 (D1700), 2200220040 m3 (D2200) and the thickness of the diaphragm is 40 m. The pressure sensitivity of the fabricated sensor was 16.6 V/V.kPa (D700), 95.6 V/V.kPa (D1700) and 183.6 V/V.kPa (D2200) for the 100 kPa full-scale pressure range. A sensitivity shift of less than 0.097%FS/C was obtained in the tempera- ture range between +20C and +370C.

Corresponding author: Young-Tae Lee

Cite this article
Young-Tae Lee, Hidekuni Takao and Makoto Ishida, Fabrication of a High Temperature Silicon Pressure Sensor Using SDB-SOI Technology, Sens. Mater., Vol. 17, No. 5, 2005, p. 269-276.