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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 28, Number 9 (2016)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 1023-1033
S&M1264 Research Paper of Special Issue https://doi.org/10.18494/SAM.2016.1391 Published: September 21, 2016 Charge Retention Improvement of Nonvolatile Radiation Sensor Using Metal–Oxide–Nitride–Oxide–Silicon with Si-Rich Nitride and Oxy-Nitride as Stack Charge-Trapping Layer [PDF] Wen-Ching Hsieh, Hao-Tien Daniel Lee, Fuh-Cheng Jong,and Shich-Chuan Wu (Received December 28, 2015; Accepted June 10, 2016) Keywords: high k, sensor, SONOS, MOS, radiation
Metal–oxide–nitride–oxide–silicon devices with Si-rich nitride and oxy-nitride as a bi-layerstack charge-trapping layer (hereafter STOB-MONOS) could be candidates for nonvolatile totalionizing dose (TID) radiation sensors. In the case of STOB-MONOS nonvolatile TID radiationsensors, gamma radiation induces a significant decrease in the threshold voltage VT, which is nearly 2 times larger than that of a standard MONOS device. The change in VT for STOB-MONOSafter gamma irradiation also has a strong correlation to TID up to 10 Mrad gamma irradiation.The reliability characteristics of VT retention time before and after gamma irradiation for STOBMONOSdevices can be markedly improved and is nearly 12% better than that of a standardMONOS device. The STOB-MONOS device in this study has demonstrated the possibility ofimproved the feasibility of non-volatile high TID radiation sensing.
Corresponding author: Wen-Ching Hsieh Cite this article Wen-Ching Hsieh, Hao-Tien Daniel Lee, Fuh-Cheng Jong,and Shich-Chuan Wu, Charge Retention Improvement of Nonvolatile Radiation Sensor Using Metal–Oxide–Nitride–Oxide–Silicon with Si-Rich Nitride and Oxy-Nitride as Stack Charge-Trapping Layer, Sens. Mater., Vol. 28, No. 9, 2016, p. 1023-1033. |
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