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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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English 日本語
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English 日本語
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MYU K.K.
Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 30, Number 3(1) (2018)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 463-469
S&M1509 Research Paper of Special Issue https://doi.org/10.18494/SAM.2018.1752 Published: February 28, 2018 Effects of a Graphene Oxide Layer on the Resistive Memory Properties of a Cu/GO/SiO2/Pt Structure [PDF] Chih-Yi Liu, Yu-Xuan Zhang, Chih-Peng Yang, Chun-Hung Lai, Min-Hang Weng, Chang-Sin Ye, and Chun-Kai Huang (Received July 6, 2017; Accepted October 20, 2017) Keywords: silicon dioxide, graphene oxide, resistive memory
A Cu/graphene oxide (GO)/SiO2/Pt structure was synthesized in order to investigate the effects of the GO layer on the properties of resistive memory. The resistance of the Cu/GO/SiO2/Pt structure can be reversibly switched between a high-resistance state and a low-resistance state by dc voltages with different polarities. Such resistance switching is dominated by the electrochemical reaction with Cu conducting filaments. The folded and layered structure of the GO film was found to limit the number of available pathways for Cu ion migration, resulting in the formation of fewer Cu conducting filaments in the SiO2 layer. Hence, the GO layer improved the stability of resistance switching. The synthesized Cu/GO/SiO2/Pt structure demonstrated low operating voltages, a low operating power, a high resistance ratio, and good reliability, which makes it suitable for use as a next-generation nonvolatile memory structure.
Corresponding author: Chih-Yi Liu Cite this article Chih-Yi Liu, Yu-Xuan Zhang, Chih-Peng Yang, Chun-Hung Lai, Min-Hang Weng, Chang-Sin Ye, and Chun-Kai Huang, Effects of a Graphene Oxide Layer on the Resistive Memory Properties of a Cu/GO/SiO2/Pt Structure, Sens. Mater., Vol. 30, No. 3, 2018, p. 463-469. |
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