pp. 2237-2244
S&M1927 Research Paper of Special Issue https://doi.org/10.18494/SAM.2019.2209 Published: July 9, 2019 Impact of Active Surface Area on Performance and Reliability of Tri-gate FinFET [PDF] Yi-Lin Yang, Chiao-Feng Chuang, Chih-Jui Lai, Wenqi Zhang, Yun-Hsuan Hsu, Chia-Jung Tsai, Wei-De Lin, Meng-Yen Lin, and Wen-Kuan Yeh (Received November 29, 2018; Accepted May 8, 2019) Keywords: active surface area (SA), contact etch stop layer (CESL), FinFET
In this work, a contact etch stop layer (CESL) was found to cause tensile stress above the gate of FinFET devices, and the top tensile stress introduced compressive stress in the channel. With increasing active surface area (SA), a higher compressive stress was observed. The effect of compressive stress became more evident, resulting in a lower current but a higher reliability for nFinFET devices.
Corresponding author: Yi-Lin YangThis work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Yi-Lin Yang, Chiao-Feng Chuang, Chih-Jui Lai, Wenqi Zhang, Yun-Hsuan Hsu, Chia-Jung Tsai, Wei-De Lin, Meng-Yen Lin, and Wen-Kuan Yeh, Impact of Active Surface Area on Performance and Reliability of Tri-gate FinFET, Sens. Mater., Vol. 31, No. 7, 2019, p. 2237-2244. |