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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 32, Number 5(3) (2020)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 1925-1930
S&M2229 Research Paper of Special Issue https://doi.org/10.18494/SAM.2020.2724 Published: May 31, 2020 A Dual-feedback K-band Low-noise Amplifier with Transformer Neutralization Technique [PDF] Si Da Tang and Chun-Hsuan Chang (Received December 3, 2019; Accepted April 21, 2020) Keywords: CMOS, low power, neutralization, sensor applications
A dual-feedback K-band low-noise amplifier (LNA) is presented. This circuit consists of two common-source configurations in series. Its input matching network uses the shunt inductive transformer technique to reduce the chip area and improve noise matching, and uses the transformer technique to improve the gain and isolation. The measured input and output return losses are less than −10 dB at 23 GHz, the isolation is −50 dB, and the gain at 23 GHz is 10.6 dB. This chip is implemented by 0.18 μm CMOS technology and its dimensions are 0.22 mm2. The DC power consumption is 5.4 mW with a supply voltage of 1 V. This amplifier can improve a complete RF front-end for sensor applications.
Corresponding author: Si Da Tang  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Si Da Tang and Chun-Hsuan Chang, A Dual-feedback K-band Low-noise Amplifier with Transformer Neutralization Technique , Sens. Mater., Vol. 32, No. 5, 2020, p. 1925-1930. |
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