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S&M2877 Perspective of Special Issue https://doi.org/10.18494/SAM.2021.3486 Published in advance: October 21, 2021 Published: March 17, 2022 Electronic Reliability Analysis under Radiation Environment [PDF] Cher Ming Tan, Vimal Kant Pandey, Yueh Chiang, and Tsung Ping Lee (Received June 24, 2021; Accepted October 13, 2021) Keywords: proton radiation, gamma radiation, soft error effect, total ionizing dose effect, MOSFET
Advances in semiconductor technology have enhanced the functionality of sensor arrays with reduced feature sizes. Owing to the spread of the Internet of Things, sensors can now be found in many applications operating in various environments. Proton and neutron radiation are always present around us but have not been detrimental to electronics at sea level. With the decreasing size of transistors and sensor elements and the increasing density of transistors in ICs of sensors and actuators, the effect of radiation on the reliability of semiconductor devices, sensors, and their electronic circuits (collectively called sensing systems) is no longer negligible, even at sea level. However, the knowledge of radiation physics and that of semiconductor physics are very different, and merging of the two sets of knowledge is necessary to evaluate the effect of radiation on the reliability of sensing systems. In this work, we summarize the extensive studies of the effects of radiation on semiconductor devices from space and avionics investigations, and we apply their results to study the radiation reliability of sensing systems in standard industry applications. In this work, we also illustrate how one can perform radiation reliability analysis for electronics in a proximity sensor, which we investigated by performing radiation experiments.
Corresponding author: Cher Ming TanThis work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Cher Ming Tan, Vimal Kant Pandey, Yueh Chiang, and Tsung Ping Lee, Electronic Reliability Analysis under Radiation Environment, Sens. Mater., Vol. 34, No. 3, 2022, p. 1119-1131. |