pp. 459-466
S&M3182 Research Paper of Special Issue https://doi.org/10.18494/SAM4144 Published: February 20, 2023 Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals [PDF] Kai Okazaki, Daisuke Nakauchi, Hiroyuki Fukushima, Takumi Kato, Noriaki Kawaguchi, and Takayuki Yanagida (Received October 28, 2022; Accepted January 5, 2023) Keywords: scintillator, near-IR, floating zone method, dose rate response, scintillation detector
We grew 0.1, 0.5, and 1% Tm-doped Bi4Ge3O12 single crystals by the floating zone method. Their photoluminescence and scintillation properties were investigated in the range from visible to near-IR. Luminescence spectra and decay times consistent with the transitions of Tm3+ were confirmed. X-ray-irradiated dose rate response properties were evaluated using the prepared samples and an InGaAs photodiode. The 1% Tm-doped sample showed the widest dynamic range (0.03–60 Gy/h) among the prepared samples.
Corresponding author: Kai OkazakiThis work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Kai Okazaki, Daisuke Nakauchi, Hiroyuki Fukushima, Takumi Kato, Noriaki Kawaguchi, and Takayuki Yanagida, Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals, Sens. Mater., Vol. 35, No. 2, 2023, p. 459-466. |