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Notice of retraction
Vol. 34, No. 8(3), S&M3042

Notice of retraction
Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials, Volume 35, Number 2(2) (2023)
Copyright(C) MYU K.K.
pp. 459-466
S&M3182 Research Paper of Special Issue
https://doi.org/10.18494/SAM4144
Published: February 20, 2023

Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals [PDF]

Kai Okazaki, Daisuke Nakauchi, Hiroyuki Fukushima, Takumi Kato, Noriaki Kawaguchi, and Takayuki Yanagida

(Received October 28, 2022; Accepted January 5, 2023)

Keywords: scintillator, near-IR, floating zone method, dose rate response, scintillation detector

We grew 0.1, 0.5, and 1% Tm-doped Bi4Ge3O12 single crystals by the floating zone method. Their photoluminescence and scintillation properties were investigated in the range from visible to near-IR. Luminescence spectra and decay times consistent with the transitions of Tm3+ were confirmed. X-ray-irradiated dose rate response properties were evaluated using the prepared samples and an InGaAs photodiode. The 1% Tm-doped sample showed the widest dynamic range (0.03–60 Gy/h) among the prepared samples.

Corresponding author: Kai Okazaki


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Cite this article
Kai Okazaki, Daisuke Nakauchi, Hiroyuki Fukushima, Takumi Kato, Noriaki Kawaguchi, and Takayuki Yanagida, Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals, Sens. Mater., Vol. 35, No. 2, 2023, p. 459-466.



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