pp. 491-497
S&M3186 Research Paper of Special Issue https://doi.org/10.18494/SAM4145 Published: February 20, 2023 Annealing Temperature Dependence of Scintillation Properties of Ga-doped ZnO Translucent Ceramics [PDF] Toshiaki Kunikata, Takumi Kato, Daiki Shiratori, Prom Kantuptim, Daisuke Nakauchi, Noriaki Kawaguchi, and Takayuki Yanagida (Received September 30, 2022; Accepted January 11, 2023) Keywords: Ga-doped ZnO, scintillation, translucent ceramic, annealing effect
Ga-doped ZnO translucent ceramics were prepared by spark plasma sintering and annealed at temperatures of 600, 650, 700, 750, and 800 °C for 24 h in air. The scintillation and optical properties of the non-annealed and annealed ZnO:Ga translucent ceramics were investigated. An absorption band from 550 to 800 nm was observed in the diffuse transmittance spectra of all the ZnO:Ga samples. In the scintillation spectra, all the ZnO:Ga samples exhibited defect-related emissions peaking at 500 nm under X-ray irradiation. Among the samples, the annealed ZnO:Ga translucent ceramic sample annealed at 700 °C showed the highest light yield (12,000 photons/5.5 MeV-α).
Corresponding author: Toshiaki KunikataThis work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Toshiaki Kunikata, Takumi Kato, Daiki Shiratori, Prom Kantuptim, Daisuke Nakauchi, Noriaki Kawaguchi, and Takayuki Yanagida , Annealing Temperature Dependence of Scintillation Properties of Ga-doped ZnO Translucent Ceramics, Sens. Mater., Vol. 35, No. 2, 2023, p. 491-497. |