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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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English 日本語
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MYU K.K.
Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 19, Number 7 (2007)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 435-444
S&M694 Research Paper Published: 2007 Optical Characteristics of an N-Well/Gate-Tied PMOSFET-type Photodetector with Built-in Transfer Gate for CMOS Image Sensor [PDF] Sang-Ho Seo, Kyoung-Do Kim, Min-Woong Seo, Jae-Sung Kong, Jang-Kyoo Shin and Pyung Choi (Received July 4, 2007; Accepted September 27, 2007) Keywords: photodetector, PMOSFET, built-in transfer gate, CMOS image sensor
In this study, a new n-well/gate-tied p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector with a built-in transfer gate has been designed and fabricated using 0.35 μm standard complementary metal oxide semiconductor (CMOS) technology. This photodetector is composed of a floating gate that is tied to an n-well and a built-in transfer gate. The built-in transfer gate controls the photocurrent flow by controlling the barrier for holes in the proposed photodetector. The designed and fabricated photodetector exhibits IDS-VDS characteristics that are similar to those of a general MOSFET when the incident light power, instead of the gate voltage, is varied. The area of the proposed photodetector is 3.8 × 5.7 μm and the responsivity is greater than 2.5 × 102 A/W, at a wavelength of 633 nm.
Corresponding author: Jang-Kyoo Shin Cite this article Sang-Ho Seo, Kyoung-Do Kim, Min-Woong Seo, Jae-Sung Kong, Jang-Kyoo Shin and Pyung Choi, Optical Characteristics of an N-Well/Gate-Tied PMOSFET-type Photodetector with Built-in Transfer Gate for CMOS Image Sensor, Sens. Mater., Vol. 19, No. 7, 2007, p. 435-444. |
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