pp. 1871-1880
S&M4024 Research Paper of Special Issue https://doi.org/10.18494/SAM5512 Published: May 16, 2025 Effects of Annealing on Properties of ITO:MgO/Ag Dual-layer Films for Sensor Material Applications [PDF] Cheng-Hsien Kuo, Sigit Tri Wicaksono, Shao-Tsen Wang, and Tao-Hsing Chen (Received December 23, 2024; Accepted April 21, 2025) Keywords: sputtering, ITO:MgO, annealing, transparent conducting film
In this study, we investigated the optical and electrical properties of ITO:MgO/Ag dual-layer transparent conducting films (with an atomic ratio of 97:3 at.%) annealed at different temperatures. Annealing was conducted in a vacuum utilizing thermal energy to rearrange the crystalline structure of the films, thus enabling atomic substitution, and to address internal defects. The optical and electrical properties of the dual-layer films were compared before and after annealing, revealing that the lowest resistivity of 2.92 × 10−5 Ω·cm was in the unannealed state, the average transmittance was 58.97% at an annealing temperature of 500 ℃, and the optimal figure of merit (FOM) was 7.71 × 10−4 after annealing at a temperature of 300 ℃.
Corresponding author: Tao-Hsing Chen![]() ![]() This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Cheng-Hsien Kuo, Sigit Tri Wicaksono, Shao-Tsen Wang, and Tao-Hsing Chen , Effects of Annealing on Properties of ITO:MgO/Ag Dual-layer Films for Sensor Material Applications, Sens. Mater., Vol. 37, No. 5, 2025, p. 1871-1880. |