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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials
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Sensors and Materials, Volume 37, Number 5(1) (2025)
Copyright(C) MYU K.K.
pp. 1871-1880
S&M4024 Research Paper of Special Issue
https://doi.org/10.18494/SAM5512
Published: May 16, 2025

Effects of Annealing on Properties of ITO:MgO/Ag Dual-layer Films for Sensor Material Applications [PDF]

Cheng-Hsien Kuo, Sigit Tri Wicaksono, Shao-Tsen Wang, and Tao-Hsing Chen

(Received December 23, 2024; Accepted April 21, 2025)

Keywords: sputtering, ITO:MgO, annealing, transparent conducting film

In this study, we investigated the optical and electrical properties of ITO:MgO/Ag dual-layer transparent conducting films (with an atomic ratio of 97:3 at.%) annealed at different temperatures. Annealing was conducted in a vacuum utilizing thermal energy to rearrange the crystalline structure of the films, thus enabling atomic substitution, and to address internal defects. The optical and electrical properties of the dual-layer films were compared before and after annealing, revealing that the lowest resistivity of 2.92 × 10−5 Ω·cm was in the unannealed state, the average transmittance was 58.97% at an annealing temperature of 500 ℃, and the optimal figure of merit (FOM) was 7.71 × 10−4 after annealing at a temperature of 300 ℃.

Corresponding author: Tao-Hsing Chen


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Cite this article
Cheng-Hsien Kuo, Sigit Tri Wicaksono, Shao-Tsen Wang, and Tao-Hsing Chen , Effects of Annealing on Properties of ITO:MgO/Ag Dual-layer Films for Sensor Material Applications, Sens. Mater., Vol. 37, No. 5, 2025, p. 1871-1880.



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