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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 37, Number 6(3) (2025)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
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pp. 2507-2511
S&M4070 Research Paper of Special Issue https://doi.org/10.18494/SAM5560 Published in advance: Published: June 25, 2025 Study and Fabrication of Ga2O3 Thin Films Using Thermal Evaporation [PDF] Ching-Fang Tseng, Ya-Chin Chiang, and Cheng-Hsing Hsu (Received January 18, 2025; Accepted May 29, 2025) Keywords: Ga2O3 thin films, thermal evaporation, electrical properties
In this study, we deposited Ga2O3 thin films on Si substrates by thermal evaporation and investigated the effects of surface morphology and electrical properties on various thermal treatments. Diffraction patterns indicated that the annealed films had a polycrystalline microstructure and that the grain size of Ga2O3 thin films increased with annealing temperature. These results indicate that suitable processing parameters are beneficial in terms of improving the microstructure and electrical performance of Ga2O3 thin films. The Ga2O3 thin films are suitable for use as a thin-film transistor or sensor.
Corresponding author: Ching-Fang Tseng  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Ching-Fang Tseng, Ya-Chin Chiang, and Cheng-Hsing Hsu, Study and Fabrication of Ga2O3 Thin Films Using Thermal Evaporation, Sens. Mater., Vol. 37, No. 6, 2025, p. 2507-2511. |
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