In this work, as-deposited silicon carbide (SiC) thin films, belonging to the class of third-generation semiconductor materials, were prepared on TiN/Si substrates by rf magnetron sputtering for application in resistive random-access memory (RRAM) devices. The SiC films were sputtered under rf powers of 50/75 W at various deposition times, while aluminum (Al) was subsequently deposited via thermal evaporation to form the metal–insulator–metal structure. Effects of rapid thermal annealing (RTA) at 300 °C on the electrical characteristics of the thin-film RRAM devices were investigated using a semiconductor parameter analyzer. The current–voltage (I–V) characteristics of the as-deposited and annealed films revealed a clear dependence on sputtering power and annealing conditions. As the deposition power increased, both the I–V curve slope and the memory window showed slight enhancement, accompanied by a high set/reset voltage. Specifically, the 50 W parameter exhibited a switching voltage of approximately 0.5 V, while that at 75 W showed 0.75 V. After annealing at 300 °C, the SiC thin films demonstrated a significant improvement in resistive switching behavior, with a memory window of 10⁵ and set and reset voltages increasing to 3 V. These enhancements are attributed to reoxidation and recrystallization processes occurring during RTA, which promote defect redistribution and improved filament formation within the SiC layer, thereby enhancing switching stability and device endurance.