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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 38, Number 5(2) (2026)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 2613-2620
S&M4457 Research paper https://doi.org/10.18494/SAM6103 Published: May 22, 2026 Fabrication and Resistive Switching Characteristics of Sol–Gel-derived SrBi₄Ti₄O₁₅ Memory Devices [PDF] Wen-Lung Lee, Kai-Huang Chen, Ming-Cheng Kao, and Shen-Feng Lin (Received November 30, 2025; Accepted April 10, 2026) Keywords: bipolar switching properties, SrBi₄Ti₄O₁₅ oxide thin film, RRAM, rf sputtering
In this study, SrBi₄Ti₄O₁₅ (SBT) thin films were deposited on TiN/Si substrates by the sol–gel method, forming a metal–insulator–metal (MIM)-structured resistive random access memory (RRAM) device. Subsequently, rapid thermal annealing (RTA) was employed to improve the crystallinity and repair surface defects through lattice reorganization. An aluminum (Al) top electrode was then deposited by physical vapor deposition (PVD) to complete the MIM structure. The surface morphology of the SBT insulating layer was characterized using a field-emission scanning electron microscopy (FE-SEM) system, while the current–voltage (I–V) characteristics were measured using a precision source/measure unit (Keysight B2902A) to investigate the resistive switching behavior and underlying carrier transport mechanisms.
Corresponding author: Wen-Lung Lee and Kai-Huang Chen  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Wen-Lung Lee, Kai-Huang Chen, Ming-Cheng Kao, and Shen-Feng Lin, Fabrication and Resistive Switching Characteristics of Sol–Gel-derived SrBi₄Ti₄O₁₅ Memory Devices, Sens. Mater., Vol. 38, No. 5, 2026, p. 2613-2620. |
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