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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 25, Number 3 (2013)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 165-176
S&M911 Research Paper of Special Issue https://doi.org/10.18494/SAM.2013.844 Published: March 28, 2013 Growth and Evaluation of Bulk GaN Crystals Grown on a Point Seed Crystal by Ba-Added Na Flux Method [PDF] Hiroki Imabayashi, Kosuke Murakami, Daisuke Matsuo, Yuma Todoroki, Hideo Takazawa, Akira Kitamoto, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura and Yusuke Mori (Received November 26, 2012; Accepted February 12, 2013) Keywords: GaN wafer, bulk single crystal, crystal growth, point seed, Na flux method
We grew bulk gallium nitride (GaN) single crystals on a point seed by using the Ba-added Na flux method and evaluated their structural and optical properties. As a result, we successfully grew habit-controlled single GaN crystals. The size of the largest crystal in this study was 7 mm along the [0001] direction and 9 mm along the ⟨11-20⟩ direction after 200 h of growth. The cathodoluminescence (CL) images of (10-10) GaN wafers sliced from the grown crystal revealed that large areas of the wafer were dislocation free. Full widths at half maximum (FWHMs) of the X-ray rocking curve (XRC) of GaN (10-10) at low-dislocation-density sectors were from 32 to 61 arcsec. No green and yellow luminescence (GL and YL, respectively) peaks were detected from the room-temperature photoluminescence spectrum. From these results, it is found that the Ba-added Na flux method of GaN crystal growth on a point seed opens the possibility of fabricating high-quality prismatic GaN bulk single crystals.
Corresponding author: Mamoru Imade Cite this article Hiroki Imabayashi, Kosuke Murakami, Daisuke Matsuo, Yuma Todoroki, Hideo Takazawa, Akira Kitamoto, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura and Yusuke Mori, Growth and Evaluation of Bulk GaN Crystals Grown on a Point Seed Crystal by Ba-Added Na Flux Method, Sens. Mater., Vol. 25, No. 3, 2013, p. 165-176. |
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