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Vol. 34, No. 8(3), S&M3042

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Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
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Sensors and Materials, Volume 25, Number 3 (2013)
Copyright(C) MYU K.K.
pp. 141-154
S&M909 Review Paper of Special Issue
https://doi.org/10.18494/SAM.2013.854
Published: March 28, 2013

Current Status and Future Prospects of GaN Substrates for Green Devices [PDF]

Toshiro Doi

(Received September 26, 2012; Accepted December 27, 2012)

Keywords: bulk GaN single crystal, Na flux method, ammonothermal method, HVPE method, nonpolar GaN, semipolar GaN, polishing/CMP, diamond polishing, bell-jar-type CMP, damaged layer

Recently, single-crystal substrates applied to optoelectronic devices, such as sapphire, GaN, and SiC, have been attracting much attention for use in green devices. At present, they are mainly used for the blue-violet semiconductor laser that is applied as the light source of Blu-ray disc equipment. In the near future, it is highly likely that they will be introduced into white LEDs used for lighting and LCD backlight, power transistors to be used for power converters, and also into power semiconductors such as power diodes, leading to the rapid growth of the green device market involving GaN, SiC and diamond. These single-crystal substrates are expected to serve as a trigger to realize a low-carbon and low-energy society, complying with the projected cutbacks of power and CO2 emission by 70 billion kWh and 40 million tons per year, respectively. This is why they are referred to as “green devices”. In this paper, we will discuss the recent approaches that are in progress to develop new devices, taking GaN substrates as an example. Furthermore, we will review current problems and future perspectives for the most critical issue of realizing large substrates, as well as for the crystal growth method and manufacturing process that affect crystal quality.

Corresponding author: Toshiro Doi


Cite this article
Toshiro Doi, Current Status and Future Prospects of GaN Substrates for Green Devices, Sens. Mater., Vol. 25, No. 3, 2013, p. 141-154.



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