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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 25, Number 3 (2013)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 219-227
S&M915 Research Paper of Special Issue https://doi.org/10.18494/SAM.2013.881 Published: March 28, 2013 Evaluation of GaN Substrate for Vertical GaN Power Device Applications [PDF] Tetsu Kachi and Tsutomu Uesugi (Received November 2, 2012; Accepted December 19, 2012) Keywords: GaN substrate, Na flux method, vertical power device, leakage current, dislocation
Pn diodes were fabricated on a GaN substrate prepared by the Na flux method. Edge and mix dislocations that developed from the GaN substrate were observed in the diodes. These threading dislocations did not induce leakage current even when the dislocation density was in the range of 105–106 cm–2. These results indicate that a GaN substrate that does not include pure screw dislocations will be applicable to vertical power devices.
Corresponding author: Tetsu Kachi Cite this article Tetsu Kachi and Tsutomu Uesugi, Evaluation of GaN Substrate for Vertical GaN Power Device Applications, Sens. Mater., Vol. 25, No. 3, 2013, p. 219-227. |
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