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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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MYU K.K.
Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 26, Number 4 (2014)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 245-251
S&M988 Research Paper of Special Issue https://doi.org/10.18494/SAM.2014.968 Published: May 27, 2014 Mid-infrared Type-II InAs/GaSb Superlattice Photodiodes Fabricated on InP Substrates [PDF] Kohei Miura, Yasuhiro Iguchi, Tsukuru Katsuyama, Yuichi Kawamura, Junpei Murooka, Haruyoshi Katayama, Shota Sugano, Tomoko Takekawa and Masafumi Kimata (Received November 28, 2013; Accepted February 17, 2014) Keywords: GaSb, InAs, type-II superlattice, InP, mid-infrared photodiode
Type-II InAs/GaSb superlattices (SLs) are attractive material systems for mid-infrared photodiodes (PDs) with higher detectivities than the conventional HgCdTe. GaSb substrates are generally used for the epitaxial growth of these type-II SLs. However, in the case of back-illuminated PDs, the GaSb substrate should be nearly removed because of its strong absorption of mid-infrared light. In this study, infrared PDs with a cut-off wavelength of 7 µm were fabricated for the first time by using the 100 period of InAs/GaSb SLs grown on an InP substrate, which has much less absorption of mid-infrared light. The dark current density at the reverse bias of −0.1 V and at a temperature of 112 K was 33.0 mA/cm2. External quantum efficiency over 10% at the wavelength of 5 µm was obtained.
Corresponding author: Kohei Miura Cite this article Kohei Miura, Yasuhiro Iguchi, Tsukuru Katsuyama, Yuichi Kawamura, Junpei Murooka, Haruyoshi Katayama, Shota Sugano, Tomoko Takekawa and Masafumi Kimata, Mid-infrared Type-II InAs/GaSb Superlattice Photodiodes Fabricated on InP Substrates, Sens. Mater., Vol. 26, No. 4, 2014, p. 245-251. |
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