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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 30, Number 3(1) (2018)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 453-461
S&M1508 Research Paper of Special Issue https://doi.org/10.18494/SAM.2018.1746 Published: February 28, 2018 Comparing of Parasitic Capacitances on Packaged Cascode Gallium Nitride Field-effect Transistors [PDF] Chih-Chiang Wu and Shyr-Long Jeng (Received May 23, 2017; Accepted November 2, 2017) Keywords: gallium nitride, cascode, parasitic capacitances
In this work, we examined the electrical characteristics of laboratory-fabricated cascode gallium nitride field-effect transistors (GaN FETs) and analyzed their parasitic capacitances. The calculated results were in good agreement with the experimental results and showed that commercial GaN FETs have superior switching performance, whereas laboratory-fabricated GaN FETs require further improvement.
Corresponding author: Shyr-Long Jeng Cite this article Chih-Chiang Wu and Shyr-Long Jeng, Comparing of Parasitic Capacitances on Packaged Cascode Gallium Nitride Field-effect Transistors, Sens. Mater., Vol. 30, No. 3, 2018, p. 453-461. |
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Hirotaka Takizawa, Masatoshi Minamisawa, Hirohiko Motoki, Koichiro Kuwahara, and Masaki Yamaguchi
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