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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 35, Number 10(2) (2023)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 4555-4569
S&M3414 Related Technologies https://doi.org/10.18494/SAM4317 Published: October 24, 2023 Radiation-resistant Silicon-on-insulator MOSFETs Realized by Neutron Irradiation [PDF] Huixiang Huang, Qi Han, Yu Li, Tao He, and Chi-Cheng Chen (Received January 7, 2023; Accepted September 14, 2023) Keywords: body potential effect, gate coupling effect, neutron irradiation, single event effect (SEE), radiation resistance
A novel partially depleted (PD) silicon-on-insulator (SOI) structure is realized by a modified process flow highlighting the improved radiation hardness. The key step to modifying the initial SOI wafers is neutron irradiation, followed by a standard post-irradiation laser annealing process that introduces localized traps with a deep level. The deep-level traps in the silicon film act as recombination centers that reduce the minority carrier lifetime effectively. A trap-rich layer is generated near the back interface after the wafer is exposed to neutron irradiation, followed by laser annealing to remove top defects. It is confirmed by simulation and experimental results that the body potential instability in PD devices, which may be introduced by high-electrical-field ionization and the single-event effect, has been efficiently suppressed.
Corresponding author: Chi-Cheng Chen  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Huixiang Huang, Qi Han, Yu Li, Tao He, and Chi-Cheng Chen, Radiation-resistant Silicon-on-insulator MOSFETs Realized by Neutron Irradiation, Sens. Mater., Vol. 35, No. 10, 2023, p. 4555-4569. |
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