Young Researcher Paper Award 2023

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Sensors and Materials, Volume 35, Number 10(2) (2023)
Copyright(C) MYU K.K.
pp. 4555-4569
S&M3414 Related Technologies
Published: October 24, 2023

Radiation-resistant Silicon-on-insulator MOSFETs Realized by Neutron Irradiation [PDF]

Huixiang Huang, Qi Han, Yu Li, Tao He, and Chi-Cheng Chen

(Received January 7, 2023; Accepted September 14, 2023)

Keywords: body potential effect, gate coupling effect, neutron irradiation, single event effect (SEE), radiation resistance

A novel partially depleted (PD) silicon-on-insulator (SOI) structure is realized by a modified process flow highlighting the improved radiation hardness. The key step to modifying the initial SOI wafers is neutron irradiation, followed by a standard post-irradiation laser annealing process that introduces localized traps with a deep level. The deep-level traps in the silicon film act as recombination centers that reduce the minority carrier lifetime effectively. A trap-rich layer is generated near the back interface after the wafer is exposed to neutron irradiation, followed by laser annealing to remove top defects. It is confirmed by simulation and experimental results that the body potential instability in PD devices, which may be introduced by high-electrical-field ionization and the single-event effect, has been efficiently suppressed.

Corresponding author: Chi-Cheng Chen

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Cite this article
Huixiang Huang, Qi Han, Yu Li, Tao He, and Chi-Cheng Chen, Radiation-resistant Silicon-on-insulator MOSFETs Realized by Neutron Irradiation, Sens. Mater., Vol. 35, No. 10, 2023, p. 4555-4569.

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