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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 36, Number 5(1) (2024)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 1825-1834
S&M3637 Research Paper of Special Issue https://doi.org/10.18494/SAM4801 Published: May 15, 2024 Fabrication and Measurement of Cosputtered Indium Gallium Oxide Ultraviolet Photodetectors [PDF] Artde Donald Kin-Tak Lam, En-Min Huang, Sheng-Po Chang, and Shoou-Jinn Chang (Received September 4, 2023; Accepted April 10, 2024) Keywords: indium gallium oxide, ultraviolet photodetector, cosputtering, responsivity, response time
Indium gallium oxide (IGO) ultraviolet (UV) photodetectors (PDs) were fabricated by cosputtering. The power of the gallium oxide target was fixed at 80 W, while the power of the indium oxide target was varied at 20, 30, 40, and 80 W. As the amount of indium doping increased, the dark current and response decay time increased. Furthermore, the sensitivity and responsivity of the PDs also increased, reaching the maximum values of 5.20 × 103 at 30 W/80 W and 1.72 × 102 A/W at 40 W/80 W, respectively. However, excessive indium doping resulted in excessively high dark current and increased sensitivity and response decay time. Therefore, proper control of indium doping can lead to high-performance IGO UV PDs.
Corresponding author: Sheng-Po Chang  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Artde Donald Kin-Tak Lam, En-Min Huang, Sheng-Po Chang, and Shoou-Jinn Chang, Fabrication and Measurement of Cosputtered Indium Gallium Oxide Ultraviolet Photodetectors, Sens. Mater., Vol. 36, No. 5, 2024, p. 1825-1834. |
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