pp. 37-51
S&M747 Research Paper https://doi.org/10.18494/SAM.2009.543 Published: April 16, 2009 Gettering by CF4-Ar Plasma-Treated Titanium within Anodically Bonded Glass-Silicon Microcavities [PDF] Surajit Kumar Hazra, Nam-kuk Kim, Jaehong Park, Byoungdoo Choi, Sangmin Lee, Tae-young Choi and Dong-Il "Dan" Cho (Received May 7, 2008; Accepted September 29, 2008) Keywords: getter, titanium, plasma, fluorine, anodic bonding, XPS
The gettering of CF4-Ar plasma-treated titanium films has been studied by X-ray photoelectron spectroscopy, optical microscopy and field emission scanning electron microscopy. This study shows a convenient way to eliminate the native oxide impurities from the titanium surface before getter activation. A vacuum-packaged environment and the activation conditions for 2 mm × 1.8 mm × 2500 Å titanium getter films were realized by a glass-silicon anodic bonding process at 400°C and a 40 min thermal treatment at 500°C, respectively. The surface characteristics of the titanium films were analyzed before and after packaging to determine the role of fluorine. The fluorine coverage on the titanium surface as a result of plasma treatment reveals a new gettering mechanism with high oxygen-capturing potential.
Corresponding author: Dong-Il “Dan” ChoCite this article Surajit Kumar Hazra, Nam-kuk Kim, Jaehong Park, Byoungdoo Choi, Sangmin Lee, Tae-young Choi and Dong-Il "Dan" Cho, Gettering by CF4-Ar Plasma-Treated Titanium within Anodically Bonded Glass-Silicon Microcavities, Sens. Mater., Vol. 21, No. 1, 2009, p. 37-51. |