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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials
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Sensors and Materials, Volume 37, Number 3(1) (2025)
Copyright(C) MYU K.K.
pp. 911-920
S&M3965 Research Paper of Special Issue
https://doi.org/10.18494/SAM5578
Published: March 12, 2025

Impact of Structural Changes in the Chip Carrier on the Heat Dissipation Performance of Power Transistors [PDF]

Yan-Zuo Chang, Kao-Wei Min, Pin-Hsi Tsai, Shao-Jun Luo, Cheng-Fu Yang, and Ho Sheng Chen

(Received January 27, 2025; Accepted February 25, 2025)

Keywords: structural change, chip carrier area, heat dissipation performance, power transistor, heat transfer coefficient, power dissipation

In this study, we primarily employed COMSOL, a finite element method analysis software, to investigate the heat dissipation of power transistors, with the TO-220 package design from Onsemi serving as a reference. The focus was on analyzing the structural parameters of the chip carrier and their impact on the thermal management of power transistors’ packaging. By varying the structural parameters of the chip carrier within the packaging area, including its length, thickness, and height, we examined how these changes affect heat dissipation. The results of the analyses indicated that the presence of a chip carrier, as compared with the unsealed model, led to a reduction in the maximum temperature by 15 ℃. The simulation results demonstrate the importance of the chip carrier’s design in enhancing thermal performance. The ultimate goal of this research was to modify the packaging model in such a way that the maximum temperature of the power transistor packaging was maintained below 175 ℃. This temperature threshold is critical for ensuring the reliable operation and longevity of power transistors in high-performance applications. By optimizing the packaging design and improving heat dissipation, in this study, we contributed to the advancement of more efficient and durable power transistor solutions for next-generation electronic devices and systems.

Corresponding author: Cheng-Fu Yang and Ho Sheng Chen


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Cite this article
Yan-Zuo Chang, Kao-Wei Min, Pin-Hsi Tsai, Shao-Jun Luo, Cheng-Fu Yang, and Ho Sheng Chen, Impact of Structural Changes in the Chip Carrier on the Heat Dissipation Performance of Power Transistors , Sens. Mater., Vol. 37, No. 3, 2025, p. 911-920.



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